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Vue d'ensemble

Génie électrique : Quantitative analysis of diodes and transistors. Semiconductor fundamentals, equilibrium and non-equilibrium carrier transport, and Fermi levels. PN junction diodes, the ideal diode, and diode switching. Bipolar Junction Transistors (BJT), physics of the ideal BJT, the Ebers-Moll model. Field effect transistors, metal-oxide semiconductor structures, static and dynamic behaviour, small-signal models. Laboratory experiments.

Terms: Hiver 2023

Instructors: Szkopek, Thomas (Winter)

• Prerequisite(s): ECSE 251, ECSE 331, and MIME 262

• Restriction(s): Not open to students who have taken ECSE 432.

• (3-4-5)